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| Semiconductor SRA2201UF PNP Silicon Transistor Descriptions * Switching application * Interface circuit and driver circuit application Features * * * * With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process High packing density Ordering Information Type NO. SRA2201UF Marking 1R Package Code SOT-323F Outline Dimensions 2.10.1 0.30~0.40 1.300.1 unit : mm * Equivalent Circuit C(OUT) 1.30 BSC 2.00.1 1 3 0.70-0.15 2 B(IN) +0.1 R1 0.110.05 R2 0~0.1 E(COMMON) PIN Connections 1. Base 2. Emitter 3. Collector R1 4.7K R2 4.7K KSR-3006-000 1 SRA2201UF Absolute maximum ratings Characteristic Out Voltage Input Voltage Out Current Power Dissipation Junction Temperature Storage Temperature (Ta=25C) Symbol VO VI IO PD TJ TSTG Ratings -50 -20 -100 200 150 -55 ~ 150 Unit V V mA mW C C Electrical Characteristics Characteristic Output Cut-off Current DC Current Gain Output Voltage Input Voltage (ON) Input Voltage (OFF) Transition Frequency Input Current (Ta=25C) Symbol IO(OFF) GI VO(ON) VI(ON) VI(OFF) fT * Test Condition VO=-50V, VI=0 VO=-5V, IO=-10mA IO=-10mA, II=-0.5mA VO=-0.2V, IO=-5mA VO=-5V, IO=-0.1mA VO=-10V, IO=-5mA VI=-5V Min. Typ. Max. 30 -1.0 55 -0.1 -1.5 -1.2 200 -500 -0.3 -2.0 -1.8 Unit nA V V V MHz mA II * : Characteristic of Transistor Only KSR-3006-000 2 SRA2201UF Electrical Characteristic Curves Fig. 1 IO - VI(ON) Fig. 2 IO - VI(OFF) Fig. 3 GI - IO KSR-3006-000 3 |
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